?2009 fairchild semiconductor corporation fdd6776a / FDU6776A_f071 rev.c www.fairchildsemi.com 1 fdd6776a / FDU6776A_f071 n-channel power trench ? mosfet january 2009 d g s d g s g s d-pak (to-252) short-lead i-pak (to-251aa) d fdd6776a / FDU6776A_f071 n-channel powertrench ? mosfet 25 v, 7.5 m ? features ? max r ds(on) = 7.5 m ? at v gs = 10 v, i d = 17.7 a ? max r ds(on) = 17.0m ? at v gs = 4.5 v, i d = 13.2 a ? 100% uil test ? rohs compliant general description this n-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional swit ching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. applications ? vcore dc-dc for desktop computers and servers ? vrm for intermediate bus architecture mosfet maximum ratings t c = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 25 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25 c 30 a -continuous (silicon limited) t c = 25 c 54 -continuous t a = 25 c (note 1a) 17.7 -pulsed 100 e as single pulse avalanche energy (note 3) 32 mj p d power dissipation t c = 25 c 39 w power dissipation t a = 25 c (note 1a) 3.7 t j , t stg operating and storage junction temperature range -55 to +175 c r jc thermal resistance, junction to case 3.8 c/w r ja thermal resistance, junction to ambient (note 1a) 40 device marking device package reel size tape width quantity fdd6776a fdd6776a d-pak (to-252) 13 ?? 12 mm 2500 units FDU6776A FDU6776A_f071 to-251aa n/a(tube) n/a 75 units
fdd6776a / FDU6776A_f071 n-channel power trench ? mosfet www.fairchildsemi.com 2 ?2009 fairchild semiconductor corporation fdd6776a / FDU6776A_f071 rev.c electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 25 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 16 mv/c i dss zero gate voltage drain current v ds = 20 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.0 1.9 3.0 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -6 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 17.7 a 5.8 7.5 m ? v gs = 10 v, i d = 17.7 a short-lead i-pak version 6.0 7.7 v gs = 4.5 v, i d = 13.2 a 12.6 17.0 v gs = 4.5 v, i d = 13.2 a short-lead i-pak version 12.8 17.2 v gs = 10 v, i d = 17.7 a, t j = 150 c 8.8 11.4 g fs forward transconductance v ds = 5 v, i d = 17.7 a 84 s c iss input capacitance v ds = 13 v, v gs = 0 v, f = 1 mhz 1120 1490 pf c oss output capacitance 238 320 pf c rss reverse transfer capacitance 221 335 pf r g gate resistance 0.9 ? t d(on) turn-on delay time v dd = 13 v, i d = 17.7 a, v gs = 10 v, r gen = 6 ? 816ns t r rise time 510ns t d(off) turn-off delay time 18 33 ns t f fall time 310ns q g total gate charge v gs = 0 v to 10 v v dd = 13 v, i d = 17.7 a 20 29 nc q g total gate charge v gs = 0 v to 5 v 12 17 nc q gs gate to source charge 3.5 nc q gd gate to drain ?miller? charge 4.9 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 3.1 a (note 2) 0.8 1.2 v v gs = 0 v, i s = 17.7 a (note 2) 0.9 1.3 t rr reverse recovery time i f = 17.7 a, di/dt = 100 a/ s 17 31 ns q rr reverse recovery charge 5 10 nc
fdd6776a / FDU6776A_f071 n-channel power trench ? mosfet www.fairchildsemi.com 3 ?2009 fairchild semiconductor corporation fdd6776a / FDU6776A_f071 rev.c notes : 1: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user?s board design. 2: pulse test: pulse width < 300 s, duty cycle < 2.0%. 3: e as of 32 mj is based on starting t j = 25 c, l = 1 mh, i as = 8 a, v dd = 23 v, v gs = 10 v. 100% test at l = 0.1 mh, i as = 19 a. 40 c/w when mounted on a 1 in 2 pad of 2 oz copper 96 c/w when mounted on a minimum pad. a) b)
fdd6776a / FDU6776A_f071 n-channel power trench ? mosfet www.fairchildsemi.com 4 ?2009 fairchild semiconductor corporation fdd6776a / FDU6776A_f071 rev.c typical characteristics t j = 25 c unless otherwise noted figure 1. 0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 v gs = 6 v v gs = 10 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 4 v v gs = 3.5 v v gs = 4.5 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 20406080100 0 1 2 3 4 5 v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 10 v v gs = 6 v v gs = 4 v v gs = 3.5 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 17.7 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 0 5 10 15 20 25 30 i d = 17.7 a t j = 25 o c t j = 150 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0123456 0 20 40 60 80 100 v ds = 3 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c t j = 175 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 175 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
fdd6776a / FDU6776A_f071 n-channel power trench ? mosfet www.fairchildsemi.com 5 ?2009 fairchild semiconductor corporation fdd6776a / FDU6776A_f071 rev.c figure 7. 0 4 8 12162024 0 2 4 6 8 10 q g , gate charge (nc) v gs , gate to source voltage (v) i d = 17.7 a v dd = 13 v v dd = 10 v v dd = 16 v gate charge characteristics figure 8. 0.1 1 10 30 30 100 1000 3000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.0001 0.001 0.01 0.1 1 10 100 1 t j = 125 o c t j = 150 o c 10 t j = 25 o c t av , time in avalanche (ms) i as , avalanche current (a) 100 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 175 0 15 30 45 60 limited by package r t jc = 3.8 o c/w v gs = 4.5 v v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 11050 0.1 1 10 100 200 10 us dc 100 ms 10 ms 1 ms 100 us i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t jc = 3.8 o c/w t c = 25 o c f i g u r e 1 2 . s i n g l e p u l s e m a x i m u m power dissipation 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 10 100 1000 10000 single pulse r t jc = 3.8 o c/w t c = 25 o c v gs = 10 v p ( pk ) , peak transient power (w) t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
fdd6776a / FDU6776A_f071 n-channel power trench ? mosfet www.fairchildsemi.com 6 ?2009 fairchild semiconductor corporation fdd6776a / FDU6776A_f071 rev.c figure 13. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.001 0.01 0.1 1 single pulse r t jc = 3.8 o c/w duty cycle-descending order normalized thermal impedance, z t jc t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t j & x r t j & + t & figure 14. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.001 0.01 0.1 1 2 single pulse r t ja = 96 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 otes: duty factor: d = t 1 /t 2 peak t j = p dm x z t j $ x r t j $ + t $ transient thermal response curve typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com fdd6776a /FDU6776A_f071 n-channel power trench ? mosfet rev. i37 anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. farichild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor pr oducts are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of producti on and manufacturing delays. fairchild is ta king strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. farichild strongly encourages customers to purchase farichild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to farichild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. farichild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. product status definitions definition of terms trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform c an be reasonably expected to cause the failure of the life supp ort device or system, or to affect its safety or effectiveness. build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? ? saving our world, 1mw /w /kw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product deve lopment. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. ?2009 fairchild semiconductor corporation fdd6776a / FDU6776A_f071 rev.c
|
